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An introduction to semiconductor microtechnology

An introduction to semiconductor microtechnology

Book Reviews not been included in this critical compilation for a variety of reasons, but usually because the raw data have only been presented in the...

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Book Reviews not been included in this critical compilation for a variety of reasons, but usually because the raw data have only been presented in the form of graphs or smoothed equations in the original publication. However, the second appendix includes for the sake of completeness the titles and references of other papers reporting self-diffusion coefficients of electrolytes not included in the main body of the work.



As stated earlier, this book will provide a very useful summary of the current state of the art for those actuahy working in the field as well as a useful point of reference for someone who simply needs to find out the value of a particular self-dilfusion coefhcient. A.D. -RIDGE


Part A. V. M. M. LOBO; Part 3, V. M. M. LOBO and J. L. QUARESMA Physical Sciences Data Series Vol. 41, Elsevier, Amsterdam, 1990, 2354 pp., USS718 (also available from Elsevier, New York)

This project had its origin in a private publication of Universitv of Coimbra. Portunal in 1975. with a second version in 1981, which those Fortunate enough to know about it, have found useful to have on their bookshelves. Now with wider availability, it can be recommended to all those seeking information about diffusion, conductance, transference numbers, densities, viscosities, activity and osmotic coefficients of aqueous solutions of single electrolytes. Conceived as a replacement for the 1926 International Critical Tables in this area, it is based on 943 references dating from 1915 to 1985. Unfortunately it is noncritical leaving the reader to form his own judgement from sometimes contradictory data in a variety of formats. Mention of some data fitting compilations such as those of Justice

(conductance), of Pitxer, of Hamer and Wu, and of Goldberg (activity and osmotic coefficients) would have been helpful. The latter’s program GAMPHI is available on computer, as indeed is the present compilation on the ELYS data base at the SERC Daresbury Laboratory accessible through the JANET network. Electrolytes are listed in alphabetical order of their chemical formulae. There is a brief introduction and a list of symbols. Appendices list the references, conversion formulae between different concentration scales, viscosity and density data over a wide temperature range for pure water, and an index of systems. A.K. COVINGTON

AN INTRODUCTION TO SEMICONDUCTOR MICROTECHNOLOGY By D. V. MORGANand K. BOARD Wiley, Chichester 1990, 2nd edition, xiv and 208 pp. f12.50

This text describes the fabrication techniques used in the production of microelectronic devices, ranging from crystal purification and growth, doping, etching, insulating films, photolithographic masking through to metahixation and packaging, and concluding with a description of NMOS and CMOS technologies, integrated circuits and future developments. It is non-mathematical, although this does not mean without equations, which seem to be regarded as synonymous statements by today’s students. Mathematical treatments are relegated to appendices dealing with evaluation techniques, diffusion and thermal oxidation of silicon. The inclusion in a text of this introductory type of two appendices giving etching formulations for silicon and gallium arsenide seems questionable. Since this is an Open University recommended text each chapter commences with aims (Instructional Objectives) and

Self Evaluation Questions. The reader is exhorted to watch out for the answers to the latter as he reads each chapter, but first one has to understand the question! Each chapter concludes with a section of problems and there are some additional exercises in the last appendix, but no answers. This readable book is strongly recommended to those who want to know MOSFETs f;dm MESFETs (regrettably there is no mention of ISFETs). and MBE from VPE and CVD. There is a list of symbdis but, apart from a rather deficient index, no list of acronyms. This paperback could be particularly useful for background reading for postgraduates from other disciplines than electronic engineering, and for the new undergraduate “Business and Technology” courses. A.K. CWINGTVN