Eps26 Lucifer - Season 3 (2017) | Mister Ajikko | Season 1 Episode 9 …Innocent as a Lamb

Silicon nitride and its application to semiconductor devices

Silicon nitride and its application to semiconductor devices

334 ABSTRACTS ON M I C R O E L E C T R O N I C S AND R E L I A B I L I T Y Silicon nitride and its application to semiconductor devices. C. CONSTANT...

98KB Sizes 3 Downloads 113 Views



Silicon nitride and its application to semiconductor devices. C. CONSTANTIN,Onde Elect., April (1968), p. 327. (In French.) After reviewing the disadvantages of silicon dioxide when it is used for passivation of semiconductor devices, the author describes the two methods he has employed in order to depose layers of silicon nitride, which may overcome the disadvantages of silica. The properties of these films are summarized in the fields of isolation, masking ability and passivation--no perceptible drift of the C - V characteristics of aluminium-silicon nitride-silicon dioxide-silicon structures was observed under bias--temperature stress at 300°C. MOS elements and MOS integrated circuits. C. JUND, J. POLLARD,J. P. MOREAU and A. Srv, Onde Elect., April (1968), p. 339. (In French.) This paper presents some typical realizations of discrete MOS elements and silicon integrated MOS circuits. After a short recall of essential points of technology in connexions with electrical characteristics, discrete MOS elements are presented: chopper, amplifier operating at 20°K, analog gate. Integration problem is approached with as examples of realization an analog gate with its control logic and a logic circuit family with complementary MOS. Evaluation of doping profiles from capacitance measurements. C. VAN OPDORP, Solid-St. Electron. 11 (1968), p. 397. Approximate C - V curves are calculated for a number of typical doping profiles near a semiconductor p-n junction. These calculated curves can be used for the evaluation of doping profiles from experimentally determined C - V curves. This evaluation of doping profiles from measured C - V curves alone is never unambiguous. It is shown that it is often possible to reach a decision regarding the real profile, if additional information concerning the semiconductor material and the process of preparation of the junction is available. Nature of an oxide layer thermally grown on silicon and determination of its thickness, both from the infra-red properties. NI. MILER, Solid-St. Electron. l l (1968), p. 391. By means of infrared spectroscopy it is proved that the oxide, thermally grown on a silicon surface, is an amorphous modification of the SiO2, in whole layer. A description is given of a method for approximate determination of the thickness of the SiO~. layer on the Si-base from the size of the absorption bands in the infrared region, and of the exact determination of the SiO 2 thickness, if greater than 2000 A, from the transmission interferences. On-characteristics of planar SCR's with regard to the use of these devices in monolithic circuits. W. KAPALLO and E. ROCHER,Solid-St. Electron. 11 (1968), p. 437. Planar SCR's consisting of a vertical N P N transistor combined with a lateral P N P transistor are highly unsymmetrical as regards geometry and current gain. When used with a subcollector--a well-known design detail in monolithic integrated transistor technologies--such a structure shows peculiar switching properties, in particular a deterioration of the on-characteristics at higher currents and a reduction of holding current. The resulting design implications for integrated circuits with SCR's are discussed. Resistivity, mobility and impurity levels in GaAs, Ge and Si at 300°K. S. M. SZE and J. C. IRVlN, Solid-St. Electron. 11 (1968), p. 599. The resistivity and mobility data of GaAs at 300°K have been analyzed by least-square method and plotted as a function of the impurity concentration. The measured impurity levels in GaAs have been presented in graphical form for the most accurate and up-to-date values. For convenient reference the published results for Ge and Si are also presented. A high Q temperature insensitive inductive transistor circuit. TAKAHITO SAITO, ToRu MIYAKAWA, TOSHIO IKEDA, KENICHIRO TAHIRA and JIRO ANDO, Solid-St. Electron. 11 (1968), p. 553. The inductive transistor circuit of "reactance diode" type is generalized to the form in which the base resistance is replaced by a series combination of a resistance and another reactance diode, and the frequency and temperature dependences of the equivalent impedance of the circuit are studied. The equivalent impedance shows a strong frequency dependence. The equivalent resistance passes througil a minimum at a frequency nearly equal to the geometrical mean of the two cut-off frequencies of the transistors. The sign of this minimum resistance can be adjusted to be either positive or negative. The series equivalent inductance increases monotonically as a function of frequency below the higher cut-off frequency of the two transistors. The increase in both the equivalent resistance and the series inductance